Publications

Found 548 results
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2011
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Wu, F., A. Tyagi, EC. Young, AE. Romanov, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck, "Misfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates", Journal of Applied Physics, vol. 109, no. 3: AIP, pp. 033505, 2011.
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hsu, P. Shan, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Misfit dislocation formation via pre-existing threading dislocation glide in (11 2\= 2) semipolar heteroepitaxy", Applied Physics Letters, vol. 99, no. 8: AIP, pp. 081912, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Feezell, D., J. Speck, S. DenBaars, and S. Nakamura, "Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates", 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, 01, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
Roy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, et al., "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
Roy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, et al., "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
2012
Haeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.
Hsu, P. Shan, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, et al., "444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer", Applied Physics Letters, vol. 100, no. 2: AIP, pp. 021104, 2012.
Hsu, P. Shan, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, et al., "444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer", Applied Physics Letters, vol. 100, no. 2: AIP, pp. 021104, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, no. 11: AIP, pp. 112102, 2012.
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, pp. 112102, 2012.

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