Publications

Found 106 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is E  [Clear All Filters]
2024
Yapparov, R., T. Tak, J. Ewing, F. Wu, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
Quevedo, A., F. Wu, T-Y. Tsai, J. J. Ewing, T. Tak, S. Gandrothula, S. Gee, X. Li, S. Nakamura, S. P. DenBaars, et al., "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
Tak, T., A. Quevedo, F. Wu, S. Gandrothula, J. J. Ewing, S. Gee, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
Ewing, J. J., F. Wu, A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.
2023
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
2022
Denbaars, S., M. Wong, P. Li, H. Li, J. Smith, R. White, J. Ewing, P. Shapturenka, M. Gordon, C. Lynsky, et al., "III-nitride-based RGB microLEDs for AR/VR applications", Light-Emitting Devices, Materials, and Applications XXVI: International Society for Optics and Photonics, 2022.
Ewing, J., C. Lynsky, J. Zhang, P. Shapturenka, M. Wong, J. Smith, M. Iza, J. S. Speck, and S. P. DenBaars, "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon", Crystals, vol. 12, pp. 1216, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
2019
Cramer, R. C., J. English, B. Bonef, and J. S. Speck, "BBr3 as a boron source in plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A, vol. 37, pp. 061502, 2019.
Espenlaub, A. C., D. J. Myers, E. C. Young, S. Marcinkevičius, C. Weisbuch, and J. S. Speck, "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs", Journal of Applied Physics, vol. 126, pp. 184502, 2019.
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
2017
Cramer, R. C., B. Bonef, J. English, C. E. Dreyer, C. G. Van de Walle, and J. S. Speck, "Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 35, no. 4: AVS, pp. 041509, 2017.
Kuritzky, L. Y., A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch, and J. S. Speck, "High wall-plug efficiency blue III-nitride LEDs designed for low current density operation", Optics express, vol. 25, no. 24: Optical Society of America, pp. 30696–30707, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Böer, K. Wolfgang, M. S. Brandt, M. J. Caldas, Z. Cao, P. Deák, D. A. Drabold, A. L. Efros, C. Felser, E. Fortunato, B. Gil, et al., Stefan Hildebrandt, 2017.
2016
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.

Pages