Publications

Found 106 results
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2023
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.

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