Publications

Found 853 results
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2001
Marchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, UK. Mishra, JS. Speck, SP. DenBaars, and JA. Freitas, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
Katona, TM., MD. Craven, PT. Fini, JS. Speck, and SP. DenBaars, "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates", Applied Physics Letters, vol. 79, no. 18: AIP, pp. 2907–2909, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 353–356, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Observation of Mg-Rich", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 353–356, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.
2000
Mishra, U. K., R. Ventury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, JS. Speck, R. York, S. DenBaars, et al., "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, UK. Mishra, SP. DenBaars, and JS. Speck, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
Fini, P., H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", Journal of crystal growth, vol. 209, no. 4: Elsevier, pp. 581–590, 2000.
Keller, S., G. Parish, JS. Speck, SP. DenBaars, and UK. Mishra, "Dislocation reduction in GaN films through selective island growth of InGaN", Applied Physics Letters, vol. 77, no. 17: AIP, pp. 2665–2667, 2000.
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.
Hansen, M., A. C. Abare, P. Kozodoy, T. M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Moran, B., M. Hansen, MD. Craven, JS. Speck, and SP. DenBaars, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
McCarthy, L., Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars, and U. Mishra, "HBT on LEO GaN", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 85–86, 2000.
Hierro, A., SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
Hansen, M., P. Fini, L. Zhao, AC. Abare, LA. Coldren, JS. Speck, and SP. DenBaars, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
Hansen, M., P. Fini, L. Zhao, A. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.

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