Publications

Found 301 results
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2016
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
Dreyer, C. E., A. Alkauskas, J. L. Lyons, J. S. Speck, and C. G. Van de Walle, "Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters", Applied Physics Letters, vol. 108, no. 14: AIP Publishing, pp. 141101, 2016.
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
AN, IMPROVED. S. E. L. E. C. T. I. V. E., "Microsoft OLE DB Provider for ODBC Drivers error'80040e31'[Microsoft][SQL Server Native Client 11.0] Âðå\`\iÿ \^\iæèäàíèÿ çàïð\^\iñà èñòåêë\^\i/item. asp, line 2545", JOURNAL FUR DIE REINE UND ANGEWANDTE MATHEMATIK, vol. 2016, no. 714: Walter de Gruyter GmbH & Co. KG, pp. 151–174, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes", Journal of Crystal Growth, vol. 456: North-Holland, pp. 67–72, 2016.
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Dreyer, C. E., A. Alkauskas, J. L. Lyons, J. S. Speck, and C. G. Van de Walle, "Sources of Shockley-Read-Hall recombination in III-nitride light emitters", APS Meeting Abstracts, 2016.
2015
Korhonen, E., V. Prozheeva, F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, et al., "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Zhang, Z., AR. Arehart, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.

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