Publications
, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
, "Spatial Localization and Variation in Defect-Related Electron Traps in GaN Materials", Bulletin of the American Physical Society: APS, 2015.
, "Spatial variations of optical properties of semipolar InGaN quantum wells", Gallium Nitride Materials and Devices X, vol. 9363: International Society for Optics and Photonics, pp. 93631U, 2015.
, "Special Issue: Nitride Semiconductors", Phys. Status Solidi A, vol. 212, no. 5: Wiley Online Library, pp. 885–891, 2015.
, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
, Stefan Hildebrandt Sabine Bahrs, 2015.
, Stefan Hildebrandt Sabine Bahrs, 2015.
, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, sep # " 15", 2015.
, "Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. 25H2_2, 2015.
, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
, "Thermally enhanced blue light-emitting diode", Applied Physics Letters, vol. 107, no. 12: AIP Publishing, pp. 121109, 2015.
, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
, "Unraveling the Efficiency Limits of GaN-Based Emitters and the Surprising Connection to Electron Devices", Meeting Abstracts, no. 23: The Electrochemical Society, pp. 1449–1449, 2015.
, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.

]