Publications
] , "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
, "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.
, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
, "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, vol. 107, no. 4: AIP, pp. 043527, 2010.
, "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
, "Impact of N-and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 24: AIP, pp. 242112, 2010.
, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
, "Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature", Applied Physics Letters, vol. 97, no. 19: AIP, pp. 191915, 2010.
, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
, "Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes", Applied Physics Letters, vol. 97, no. 6: AIP, pp. 061118, 2010.
, "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2010.
, Light emitting device having a plurality of light emitting cells and method of fabricating the same, aug # " 10", 2010.
, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
, "Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 10: AIP, pp. 102111, 2010.
, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.