| Title | Impact of N-and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Arehart, AR., T. Homan, MH. Wong, C. Poblenz, JS. Speck, and SA. Ringel |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Pagination | 242112 |