Publications
Found 647 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is W [Clear All Filters]
, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
, "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
, "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "{In situ x-ray diffraction study of crystallization kinetics in PbZr1-xTixO3,(PZT", Chemistry of Materials, vol. 6, no. 6: American Chemical Society, pp. 750–754, 1994.
, "Hierarchical domain structures and in situ domain migration in the antiferroelectric ceramic PLSnZT", Journal of applied physics, vol. 73, no. 11: AIP, pp. 7261–7267, 1993.
, "Characterization of the Si/Diamond Interface", MRS Online Proceedings Library Archive, vol. 242: Cambridge University Press, 1992.
, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.
, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
, About Materials Science, 1983.