Publications

Found 388 results
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2001
Ding, Y., H-J. Im, JP. Pelz, B. Heying, and JS. Speck, "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
Im, H-J., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
Im, HJ., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
A Andrews, M., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
Romanov, AE., GE. Beltz, WT. Fischer, PM. Petroff, and JS. Speck, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
McCarthy, L. S., I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, SP. DenBaars, et al., "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Speck, J. S., P. M. Petroff, and G. E. Beltz, Periodic Lattices of Interacting Self-Assembled Quantum Dots: DTIC Document, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
Lee, H., JA. Johnson, MY. He, JS. Speck, and PM. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.
2000
Liu, Y., A. S. Nagra, E. G. Erker, P. Periaswamy, T. R. Taylor, J. Speck, and R. A. York, "BaSrTiO/sub 3/interdigitated capacitors for distributed phase shifter applications", IEEE microwave and guided wave letters, vol. 10, no. 11: IEEE, pp. 448–450, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
Keller, S., G. Parish, JS. Speck, SP. DenBaars, and UK. Mishra, "Dislocation reduction in GaN films through selective island growth of InGaN", Applied Physics Letters, vol. 77, no. 17: AIP, pp. 2665–2667, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
York, R., A. Nagra, E. Erker, T. Taylor, P. Periaswamy, J. Speck, S. Streiffer, and O. Auciello, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.

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