Publications

Found 283 results
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2017
Shen, C., T. Khee Ng, Y. Guo, C. Lee, J. T. Leonard, G. Liu, K. Ting Ho, H. M. Oubei, X. Sun, J. H. Lerma, et al., Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
Jiang, R., E. Xia Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 64, no. 1: IEEE, pp. 218–225, 2017.
2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Hogan, J. E., S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, C. Shen, T. Margalith, T. Khee Ng, SP. DenBaars, B. S. Ooi, JS. Speck, et al., "Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481B, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, C. Shen, T. Margalith, T. Khee Ng, SP. DenBaars, B. S. Ooi, JS. Speck, et al., "Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481B, 2016.
Oshima, Y., E. Ahmadi, S. C. Badescu, F. Wu, and J. S. Speck, "Composition determination of β-(Al x Ga1- x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction", Applied Physics Express, vol. 9, no. 6: IOP Publishing, pp. 061102, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Mughal, AJ., S. Oh, A. Myzaferi, S. Nakamura, JS. Speck, and SP. DenBaars, "High-power LEDs using Ga-doped ZnO current-spreading layers", Electronics Letters, vol. 52, no. 4: IET Digital Library, pp. 304–306, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Yonkee, B. P., E. C. Young, J. T. Leonard, C. Lee, S. Ho Oh, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.

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