Publications

Found 522 results
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2012
Chung, R. B., C. Han, S. P. DenBaars, J. S. Speck, and S. Nakamura, METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
Cardwell, DW., AR. Arehart, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. S. Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, NON-POLAR (Al, B, In, Ga) N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
Choi, S-B., S-Y. Bae, D-S. Lee, B. Hyun Kong, H. Koun Cho, J-H. Song, B-J. Ahn, J. F. Keading, S. Nakamura, S. P. DenBaars, et al., "Optical Characterization of Double Peak Behavior in 101Ø1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates", Japanese Journal of Applied Physics, vol. 51, no. 5R: IOP Publishing, pp. 052101, 2012.
Choi, S-B., S-Y. Bae, D-S. Lee, B. Hyun Kong, H. Koun Cho, J-H. Song, B-J. Ahn, J. F. Keading, S. Nakamura, S. P. DenBaars, et al., "Optical Characterization of Double Peak Behavior in 101Ø1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates", Japanese Journal of Applied Physics, vol. 51, no. 5R: IOP Publishing, pp. 052101, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
Iza, M., C. J. Neufeld, S. C. Cruz, R. M. Farrell, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Textured iii-v semiconductor, may # " 3", 2012.
2011
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Prosa, TJ., PH. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, SP. DenBaars, S. Nakamura, and JS. Speck, "Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate", Applied physics letters, vol. 98, no. 19: AIP, pp. 191903, 2011.
Simeonov, D., MY. Tsai, HT. Chen, C. Weisbuch, and J. Speck, "Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices", Electronics Letters, vol. 47, no. 9: IET, pp. 556–558, 2011.
Bierwagen, O., J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, "Depletion of the In 2 O 3 (001) and (111) surface electron accumulation by an oxygen plasma surface treatment", Applied Physics Letters, vol. 98, no. 17: AIP, pp. 172101, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors", Applied Physics Express, vol. 4, no. 2, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors", Applied Physics Express, vol. 4, no. 2, 2011.
Rangel, E., E. Matioli, Y-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes", Applied physics letters, vol. 98, no. 8: AIP, pp. 081104, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.

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