Publications
] , "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
, "Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091102, 2008.
, Development of Advanced Ill-Nitride Materials: DTIC Document, 2008.
, Development of III-Nitride Materials for IR Applications: DTIC Document, 2008.
, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes", Applied physics letters, vol. 93, no. 10: AIP, pp. 103502, 2008.
, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061103, 2008.
, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.
, "Enhanced terahertz radiation from high stacking fault density nonpolar GaN", Applied Physics Letters, vol. 92, no. 24: AIP, pp. 241106, 2008.
, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
, High efficiency white, single or multi-color light emitting diodes (leds) by index matching structures, may # " 29", 2008.
, "High power and high efficiency semipolar InGaN light emitting diodes", Journal of Light & Visual Environment, vol. 32, no. 2: The Illuminating Engineering Institute of Japan, pp. 107–110, 2008.
, "Impact of point defects on the luminescence properties of (Al, Ga) N", Materials Science Forum, vol. 590: Trans Tech Publications, pp. 233–248, 2008.
, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
, "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
, "In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 104, no. 3: AIP, pp. 033541, 2008.
, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.