Found 1578 results
Author Title [ Type(Desc)] Year
Speck, J. S., Epitaxial Oxide Thin Films II: Symposium Held November 26-30, 1995, Boston, Massachusetts, USA: Materials Research Society, 1996.
Eom, C-B., C. Foster, ME. Hawley, D. Schlom, and JS. Speck, Epitaxial Oxide Thin Films III, vol. 474: Materials Research Society, 1997.
Asahi, H., and Y. Horikoshi, "Molecular Beam Epitaxy: Materials and Device Applications", Wiley Series in Materials for Electronic & Optoelectronic Applications: Wiley, 2019.
Book Chapter
Fireman, M. N., and J. S. Speck, "Ammonia Molecular Beam Epitaxy of III‐Nitrides", Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics: John Wiley & Sons Ltd, 2019.
Kelchner, KM., SP. DenBaars, and JS. Speck, "GaN Laser Diodes on Nonpolar and Semipolar Planes", Semiconductors and Semimetals, vol. 86: Elsevier, pp. 149–182, 2012.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "MBE of transparent semiconducting oxides", Molecular Beam Epitaxy, pp. 347–367, 2013.
Rajan, S., A. Chakraborty, U. K. Mishra, C. Poblenz, P. Waltereit, and J. S. Speck, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.
Koblmüller, G., , EC. Young, and JS. Speck, "Molecular beam epitaxy of nitrides for advanced electronic materials", Handbook of Crystal Growth: Thin Films and Epitaxy (Second Edition), pp. 705–754, 2015.
Wu, Y-R., C-Y. Huang, Y. Zhao, and JS. Speck, "Nonpolar and semipolar LEDs", Nitride Semiconductor Light-Emitting Diodes (LEDs), pp. 250–275, 2014.
A., M., and S. J., "Plasma-Assisted Molecular Beam Epitaxy 1", Gallium Oxide, vol. 293: Springer, Cham, 2020.
Gallinat, CS., G. Koblmu, and others, "Thermal stability, surface kinetics, and MBE growth diagrams for N-and In-face InN", Indium Nitride and Related Alloys: CRC Press, pp. 67–97, 2009.
Conference Paper
Mauze, A., Y. Zhang, and J. Speck, "(010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Lee, C., C. Zhang, M. Cantore, R. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
Haeger, D., E. Young, R. Chung, F. Wu, S. Nakamura, S. DenBaars, J. S. Speck, A. Romanov, and D. A. Cohen, "384nm AlGaN Diode Lasers on Relaxed Semipolar Buffers", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–4, 2012.
Raring, J. W., M. C. Schmidt, C. Poblenz, M. J. Mondry, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, "47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems", SID Symposium Digest of Technical Papers, vol. 42, no. 1: Wiley Online Library, pp. 677–680, 2011.
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Suh, I., P. Roblin, Y. Ko, C-K. Yang, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, et al., "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
DenBaars, SP., C-C. Pan, N. Pfaff, S. Tanaka, JS. Speck, and S. Nakamura, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
Mishra, U. K., R. Ventury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, JS. Speck, R. York, S. DenBaars, et al., "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
Recht, F., L. McCarthy, L. Shen, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Andrews, AM., and JS. Speck, "Antimony segregation in the oxidation of strained AlAsSb interlayers", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 181–182, 2002.