Publications

Found 1586 results
Author Title Type [ Year(Asc)]
1996
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
Speck, J. S., Epitaxial Oxide Thin Films II: Symposium Held November 26-30, 1995, Boston, Massachusetts, USA: Materials Research Society, 1996.
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Chen, C-H., E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
Lefevre, MJ., JS. Speck, RW. Schwartz, D. Dimos, and SJ. Lockwood, "Microstructural development in sol-gel derived lead zirconate titanate thin films: The role of precursor stoichiometry and processing environment", Journal of materials research, vol. 11, no. 8: Cambridge University Press, pp. 2076–2084, 1996.
Zhao, L., AT. Chien, FF. Lange, and JS. Speck, "Microstructural development of BaTiO 3 powders synthesized by aqueous methods", Journal of materials research, vol. 11, no. 6: Cambridge University Press, pp. 1325–1328, 1996.
Seifert, A., A. Vojta, JS. Speck, and FF. Lange, "Microstructural instability in single-crystal thin films", Journal of materials research, vol. 11, no. 6: Cambridge University Press, pp. 1470–1482, 1996.
Romanov, AE., W. Pompe, G. Beltz, and JS. Speck, "Modeling of threading dislocation density reduction in heteroepitaxial layers I. Geometry and crystallography", physica status solidi (b), vol. 198, no. 2: WILEY-VCH Verlag, pp. 599–613, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
Yao, H., CH. Yan, HA. Jenkinson, JM. Zavada, JS. Speck, and SP. DenBaars, "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry", MRS Online Proceedings Library Archive, vol. 449: Cambridge University Press, 1996.
Lefevre, MJ., JS. Speck, RW. Schwartz, D. Dimos, SJ. Lockwood, H. Nagata, I. Sakamoto, H. Honda, J. Ichikawa, EM. Haga, et al., "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
Foster, CM., W. Pompe, AC. Daykin, and JS. Speck, "Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films", Journal of applied physics, vol. 79, no. 3: AIP, pp. 1405–1415, 1996.
Wu, XH., D. Kapolnek, and JS. Speck, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
Heying, B., XH. Wu, S. Keller, Y. Li, D. Kapolnek, BP. Keller, S. P. DenBaars, and JS. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
Heying, B., X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
Speck, JS., MA. Brewer, G. Beltz, AE. Romanov, and W. Pompe, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of applied physics, vol. 80, no. 7: AIP, pp. 3808–3816, 1996.
Romanov, AE., W. Pompe, and JS. Speck, "Theory of microstructure and mechanics of the... a 1/a 2/a 1/a 2... domain pattern in epitaxial ferroelectric and ferroelastic films", Journal of applied physics, vol. 79, no. 8: AIP, pp. 4037–4049, 1996.
1995
Schueler, B. A., and X. Hu, "Correction of image intensifier distortion for three-dimensional x-ray angiography", Medical Imaging 1995: Physics of Medical Imaging, vol. 2432: International Society for Optics and Photonics, pp. 272–280, 1995.
Srikant, V., EJ. Tarsa, DR. Clarke, and JS. Speck, "Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate", Journal of applied physics, vol. 77, no. 4: AIP, pp. 1517–1522, 1995.
Speck, JS., AC. Daykin, A. Seifert, AE. Romanov, and W. Pompe, "Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations", Journal of applied physics, vol. 78, no. 3: AIP, pp. 1696–1706, 1995.
Seifert, A., F. F. Lange, and J. S. Speck, "Epitaxial growth of PbTiO 3 thin films on (001) SrTiO 3 from solution precursors", Journal of Materials Research, vol. 10, no. 3: Cambridge University Press, pp. 680–691, 1995.

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