Publications

Found 1586 results
Author Title Type [ Year(Asc)]
2005
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, P. M. Petroff, and JS. Speck, "Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2178–2182, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Rhombohedral LSMO films–a unique case of ferroelastic domain formation", physica status solidi (a), vol. 202, no. 4: WILEY-VCH Verlag, 2005.
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, SP. DenBaars, and JS. Speck, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
Rudin, S., GA. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
Grundmann, MJ., JS. Speck, and UK. Mishra, "Tunnel junctions in GaN/AlN for optoelectronic applications", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 23–24, 2005.
Poblenz, C., P. Waltereit, and JS. Speck, "Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1379–1385, 2005.
2004
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
Miller, EJ., ET. Yu, P. Waltereit, and JS. Speck, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Green, DS., UK. Mishra, and JS. Speck, "Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 95, no. 12: AIP, pp. 8456–8462, 2004.
Armstrong, A., D. Green, AR. Arehart, UK. Mishra, JS. Speck, and SA. Ringel, "Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN: C and their Influence on Yellow Luminescence", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Katona, TM., MD. Craven, JS. Speck, and SP. DenBaars, "Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN", Applied physics letters, vol. 85, no. 8: AIP, pp. 1350–1352, 2004.
Gao, Y., MD. Craven, JS. Speck, SP. Den Baars, and EL. Hu, "Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride", Applied physics letters, vol. 84, no. 17: AIP, pp. 3322–3324, 2004.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, UK. Mishra, and JS. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
Wu, Y., A. Hanlon, JF. Kaeding, R. Sharma, PT. Fini, S. Nakamura, and JS. Speck, "Effect of nitridation on polarity, microstructure, and morphology of AlN films", Applied physics letters, vol. 84, no. 6: AIP, pp. 912–914, 2004.

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