Publications
] , "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
, "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
, "Crack formation in surface layers with strain gradients", International Journal of Materials Research, vol. 98, no. 8: Carl Hanser Verlag, pp. 723–728, 2007.
, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of distributed Bragg Reflectors for deep ultraviolet applications", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L767, 2007.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
, "Edgar, JH, see Lu, P. 300 (2007) 336 Edwards, PR, see Rizzi, F. 300 (2007) 254 Egawa, S., see Honda, T. 300 (2007) 90 El Jani, B., see Fitouri, H. 300 (2007) 347 Epelbaum, BM, see Bickermann, M. 300 (2007) 299", Journal of Crystal Growth, vol. 300, pp. 555–561, 2007.
, "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers", Journal of crystal growth, vol. 300, no. 1: Elsevier, pp. 233–238, 2007.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on: IEEE, pp. 1–2, 2007.
, "Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 513–514, 2007.
, Focus on nonpolar gallium nitride: Wiley Online Library, 2007.
, "Formation and reduction of pyramidal hillocks on m-plane ${$1 1 00$}$ GaN", Applied Physics Letters, vol. 91, no. 19: AIP, pp. 191906, 2007.
, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
, "Growth and characterization of N-polar In Ga N/ Ga N multiquantum wells", Applied physics letters, vol. 90, no. 19: AIP, pp. 191908, 2007.
, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN", Journal of Applied Physics, vol. 102, no. 6: AIP, pp. 064907, 2007.
, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
, "Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient", Japanese journal of applied physics, vol. 46, no. 6L: IOP Publishing, pp. L525, 2007.