Publications
"Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.
, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
, "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
, "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
, "Molecular-beam epitaxy of p-type m-plane GaN", Applied Physics Letters, vol. 86, no. 26: AIP, pp. 262104, 2005.
, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
, "Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2178–2182, 2005.
, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
, "Rhombohedral LSMO films–a unique case of ferroelastic domain formation", physica status solidi (a), vol. 202, no. 4: WILEY-VCH Verlag, 2005.
, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
, Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
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