Publications

Found 62 results
Author Title Type [ Year(Asc)]
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2000
Romanov, AE., and JS. Speck, "Relaxation enhancing interlayers (REIs) in threading dislocation reduction", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 901–905, 2000.
Taylor, TR., JS. Speck, and RA. York, "RF sputtered high tunability Barium Strontium Titanate (BST) thin films for high frequency applications", ISIF 2000 Conference, Aachen, Germany, Mar, 2000.
1999
Padmini, P., TR. Taylor, MJ. Lefevre, AS. Nagra, RA. York, and JS. Speck, "Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering", Applied Physics Letters, vol. 75, no. 20: AIP, pp. 3186–3188, 1999.
G Stephenson, B., J. A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P. H. Fuoss, P. Fini, S. P. DenBaars, and J. S. Speck, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
Speck, JS., and SJ. Rosner, "The role of threading dislocations in the physical properties of GaN and its alloys", Physica B: Condensed Matter, vol. 273: Elsevier, pp. 24–32, 1999.
1998
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.
1996
Foster, CM., W. Pompe, AC. Daykin, and JS. Speck, "Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films", Journal of applied physics, vol. 79, no. 3: AIP, pp. 1405–1415, 1996.
Wu, XH., D. Kapolnek, and JS. Speck, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
Heying, B., XH. Wu, S. Keller, Y. Li, D. Kapolnek, BP. Keller, S. P. DenBaars, and JS. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
Heying, B., X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
1994
Lefevre, MJ., DB. Dimos, and JS. Speck, "The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films", PROCEEDINGS OF THE ANNUAL MEETING-ELECTRON MICROSCOPY SOCIETY OF AMERICA: SAN FRANCISCO PRESS, pp. 582–582, 1994.
1993
Ibbetson, JP., JS. Speck, NX. Nguyen, AC. Gossard, and UK. Mishra, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.

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