Publications
] , "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy", IEICE transactions on electronics, vol. 89, no. 7: The Institute of Electronics, Information and Communication Engineers, pp. 906–912, 2006.
, "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
, "Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE: IEEE, pp. 1–4, 2007.
, "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
, "Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97", Device Research Conference (DRC), 2010: IEEE, pp. 133–134, 2010.
, "Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates", Photonics Conference (PHO), 2011 IEEE: IEEE, pp. 503–504, 2011.
, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
, Reactor designs for use in ammonothermal growth of group-III nitride crystals, feb # " 4", 2014.
, "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
, "Recent and forthcoming publications in pss", Phys. Status Solidi A, vol. 212, no. 4, pp. 713, 2015.
, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.