Publications

Found 62 results
Author Title Type [ Year(Desc)]
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1993
Ibbetson, JP., JS. Speck, NX. Nguyen, AC. Gossard, and UK. Mishra, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.
1994
Lefevre, MJ., DB. Dimos, and JS. Speck, "The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films", PROCEEDINGS OF THE ANNUAL MEETING-ELECTRON MICROSCOPY SOCIETY OF AMERICA: SAN FRANCISCO PRESS, pp. 582–582, 1994.
1998
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.
2000
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: AIP, pp. 845–847, 2000.
Romanov, AE., and JS. Speck, "Relaxation enhancing interlayers (REIs) in threading dislocation reduction", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 901–905, 2000.
Taylor, TR., JS. Speck, and RA. York, "RF sputtered high tunability Barium Strontium Titanate (BST) thin films for high frequency applications", ISIF 2000 Conference, Aachen, Germany, Mar, 2000.
2001
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
Shapiro, NA., H. Feick, NF. Gardner, WK. Götz, P. Waltereit, JS. Speck, and ER. Weber, "Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 147–151, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
Speck, J. S., "The role of threading dislocations in the physical properties of GaN and its alloys", Materials Science Forum, vol. 353: Trans Tech Publications, pp. 769–778, 2001.
2003
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, P. Waltereit, C. Poblenz, and JS. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.

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