Publications

Found 121 results
Author Title Type [ Year(Asc)]
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2001
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Observation of Mg-Rich", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 353–356, 2001.
Speck, J. S., P. M. Petroff, and G. E. Beltz, Periodic Lattices of Interacting Self-Assembled Quantum Dots: DTIC Document, 2001.
Acikel, B., Y. Liu, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Phase shifters using (Ba, Sr) TiO/sub 3/thin films on sapphire and glass substrates", Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 2: IEEE, pp. 1191–1194, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
2000
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
Elhamri, S., A. Saxler, D. Cull, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, et al., "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
Elhamri, S., A. Saxler, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, JP. Ibbetson, S. Keller, et al., "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction [Metal Organic Chemical Vapor Deposition]: Univ. of California, Santa Barbara, CA (US), 2000.
Ibbetson, J. Paul, PT. Fini, KD. Ness, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors", Applied Physics Letters, vol. 77, no. 2: AIP, pp. 250–252, 2000.
1998
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
1995
Narwankar, PK., JS. Speck, and FF. Lange, "Phase partitioning and epitaxy of Zr (Al) O 2 thin films on cubic zirconia substrates", Journal of materials research, vol. 10, no. 7: Cambridge University Press, pp. 1756–1763, 1995.
1993
Fork, DK., JJ. Kingston, GB. Anderson, EJ. Tarsa, and JS. Speck, "Progress toward viable epitaxial oxide ferroelectric waveguide heterostructures on GaAs", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
Tarsa, EJ., JS. Speck, and MD. Robinson, "Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures", Applied physics letters, vol. 63, no. 4: AIP, pp. 539–541, 1993.
Tarsa, EJ., JH. English, and JS. Speck, "Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia", Applied physics letters, vol. 62, no. 19: AIP, pp. 2332–2334, 1993.
1989
Sugimoto, T., "Preparation and characterization of monodispersed colloidal particles", MRS Bulletin, vol. 14, no. 12: Cambridge University Press, pp. 23–28, 1989.

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