Publications

Found 67 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is N  [Clear All Filters]
2007
Rajan, S., A. Chini, M. Hoi Wong, J. S. Speck, and U. K. Mishra, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
Rajan, S., E. Hsieh, M. Hoi Wong, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.
2006
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE electron device letters, vol. 27, no. 4: IEEE, pp. 205–207, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
2005
Armstrong, A., A. Arehart, D. Green, JS. Speck, UK. Mishra, and SA. Ringel, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
2004
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
Chakraborty, A., BA. Haskell, S. Keller, JS. Speck, SP. DenBaars, S. Nakamura, and UK. Mishra, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
2003
Craven, M., and J. Speck, Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
2002
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180/spl deg/high performance phase shifter using (Ba, Sr) TiO/sub 3/thin films", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 3: IEEE, pp. 1467–1469, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180º high performance phase shifter using (BaSr)TiO3 thin films", 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), June, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Nonpolar (11&1macr; 0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr; 02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 541–544, 2002.
1998
Young, DK., S. Keller, EL. Hu, J. Speck, PA. Crowell, and DD. Awschalom, "Near Field Spectroscopy of InGaN Single and Multiple Quantum Well Structures", APS March Meeting Abstracts, 1998.
1996
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.

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