Publications

Found 121 results
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2005
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
McLaurin, M., TE. Mates, and JS. Speck, "Molecular-beam epitaxy of p-type m-plane GaN", Applied Physics Letters, vol. 86, no. 26: AIP, pp. 262104, 2005.
2004
Katona, TM., P. Cantu, S. Keller, Y. Wu, JS. Speck, and SP. DenBaars, "Maskless lateral epitaxial overgrowth of high-aluminum-content Al x Ga 1- x N", Applied physics letters, vol. 84, no. 24: AIP, pp. 5025–5027, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Measurement of polarization charge and conduction-band offset at In x Ga 1- x N/GaN heterojunction interfaces", Applied physics letters, vol. 84, no. 23: AIP, pp. 4644–4646, 2004.
Craven, MD., F. Wu, A. Chakraborty, B. Imer, UK. Mishra, SP. DenBaars, and JS. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
P Alejandro, C., S. Keller, T. Li, UK. Mishra, JS. Speck, and SP. DenBaars, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
Andrews, AM., R. LeSar, MA. Kerner, JS. Speck, AE. Romanov, AL. Kolesnikova, M. Bobeth, and W. Pompe, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
2003
Jena, D., S. Heikman, JS. Speck, UK. Mishra, A. Link, and O. Ambacher, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
Romanov, AE., P. Fini, and JS. Speck, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
2002
Hansen, M., LF. Chen, SH. Lim, SP. DenBaars, and JS. Speck, "Mg-rich precipitates in the p-type doping of InGaN-based laser diodes", Applied physics letters, vol. 80, no. 14: AIP, pp. 2469–2471, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Hansen, M., P. Fini, M. Craven, B. Heying, JS. Speck, and SP. DenBaars, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
2001
Marchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, UK. Mishra, JS. Speck, SP. DenBaars, and JA. Freitas, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
2000
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
York, R., A. Nagra, E. Erker, T. Taylor, P. Periaswamy, J. Speck, S. Streiffer, and O. Auciello, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
Green, DS., S. Heikman, B. Heying, PR. Tavernier, JS. Speck, DR. Clarke, SP. Den Baars, and UK. Mishra, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
Erker, E. G., A. S. Nagra, Y. Liu, P. Periaswamy, T. R. Taylor, J. Speck, and R. A. York, "Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/parallel plate capacitors", IEEE microwave and guided wave letters, vol. 10, no. 1: IEEE, pp. 10–12, 2000.
1999
Fini, P., H. Marchand, JP. Ibbetson, B. Moran, L. Zhao, SP. DenBaars, JS. Speck, and UK. Mishra, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.

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