Publications

Found 110 results
Author Title Type [ Year(Asc)]
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2010
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
2009
D'evelyn, M. P., J. S. Speck, M. T. Coulter, and S. Nakamura, Heater device and method for high pressure processing of crystalline materials, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
Wong, M. Hoi, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
Navarro, A., C. Rivera, J. Pereiro, E. Munoz, B. Imer, SP. DenBaars, and JS. Speck, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
Ive, T., T. Ben-Yaacov, C. G. Van de Walle, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Homoepitaxial growth and characterization of ZnO (0001) thin films grown by metalorganic chemical vapor epitaxy", physica status solidi (c), vol. 6, no. 6: Wiley Online Library, pp. 1460–1463, 2009.
2008
Weisbuch, C. C. A., J. S. Speck, and S. P. DenBaars, High efficiency white, single or multi-color light emitting diodes (leds) by index matching structures, may # " 29", 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency semipolar InGaN light emitting diodes", Journal of Light & Visual Environment, vol. 32, no. 2: The Illuminating Engineering Institute of Japan, pp. 107–110, 2008.
Weisbuch, C. C. A., A. J. F. David, J. S. Speck, and S. P. DenBaars, Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate, 2008.
2007
Iso, K., H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L960, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates", Japanese Journal of Applied Physics, vol. 46, pp. L129-L131, 2007.
Koblmüller, G., F. Wu, T. Mates, JS. Speck, S. Fernández-Garrido, and E. Calleja, "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 91, no. 22: AIP, pp. 221905, 2007.
Zhong, H., A. Tyagi, N. N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
Sato, H., A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
Schmidt, MC., KC. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, SP. DenBaars, and JS. Speck, "High Power and High External Efficiency m-Plane InGaN LEDs", The European Conference on Lasers and Electro-Optics: Optical Society of America, pp. CE3_3, 2007.
Schmidt, M. C., K-C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High power and high external efficiency m-plane InGaN light emitting diodes", Japanese journal of applied physics, vol. 46, no. 2L: IOP Publishing, pp. L126, 2007.
2005
Palacios, T., A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications", IEEE Electron Device Letters, vol. 26, no. 11: IEEE, pp. 781–783, 2005.
2003
Liu, Y., T. R. Taylor, P. J. Hansen, J. Speck, and R. A. York, "High-performance and Low-cost Distributed Phase Shifters Using Optimized BaSrTiO3 Interdigitated Capacitors", Electrical and Computer Engineering Dept., Materials Dept., University of California at Santa Barbara, Santa Barbara, CA, vol. 93106, pp. 14, 2003.
Golan, Y., P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and JS. Speck, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
Hudait, MK., Y. Lin, DM. Wilt, JS. Speck, CA. Tivarus, ER. Heller, JP. Pelz, and SA. Ringel, "High-quality InAs y P 1- y step-graded buffer by molecular-beam epitaxy", Applied physics letters, vol. 82, no. 19: AIP, pp. 3212–3214, 2003.
2002
Waltereit, P., S-H. Lim, M. McLaurin, and JS. Speck, "Heteroepitaxial Growth of GaN on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 524–527, 2002.
Hansen, M., J. Piprek, PM. Pattison, JS. Speck, S. Nakamura, and SP. DenBaars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
Liu, Y., T. R. Taylor, J. S. Speck, and R. A. York, "High-isolation BST-MEMS switches", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 1: IEEE, pp. 227–230, 2002.

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