Publications

Found 18 results
Author Title Type [ Year(Asc)]
Filters: Author is Wu, Feng and First Letter Of Title is S  [Clear All Filters]
2023
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
2017
Ahmadi, E., Y. Oshima, F. Wu, and J. S. Speck, "Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 32, no. 3: IOP Publishing, pp. 035004, 2017.
2015
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.
2014
Wu, F., Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
2013
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
2011
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
2010
Wu, F., Y-. Da Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231912, 2010.
2009
Masui, H., D. S. Kamber, S. E. Brinkley, F. Wu, T. J. Baker, H. Zhong, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
2008
Hashimoto, T., F. Wu, M. Saito, K. Fujito, J. S. Speck, and S. Nakamura, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
2007
Hashimoto, T., M. Saito, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura, "Seeded growth of GaN by the basic ammonothermal method", Journal of crystal growth, vol. 305, no. 2: Elsevier, pp. 311–316, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
2006
Imer, B., F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
2005
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
2004
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.