Publications
] , "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
, "Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 26: AIP, pp. 262102, 2012.
, "Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications", Meeting Abstracts, no. 30: The Electrochemical Society, pp. 2531–2531, 2012.
, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
, "Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 26: AIP, pp. 262102, 2012.
, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
, "Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with $ f_ ${$T$}$ $ of 275 GHz", IEEE Electron Device Letters, vol. 33, no. 7: IEEE, pp. 961–963, 2012.