Publications

Found 13 results
Author Title Type [ Year(Desc)]
Filters: Author is Mates, T  [Clear All Filters]
1999
Heying, B., I. Smorchkova, C. Elsass, E. Haus, P. Fini, T. Mates, SP. DenBaars, U. Mishra, and JS. Speck, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
2000
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
2001
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
2002
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
Poblenz, C., T. Mates, M. Craven, SP. DenBaars, and JS. Speck, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
2003
Andrews, AM., KL. van Horn, T. Mates, and JS. Speck, "Antimony segregation in the oxidation of AlAsSb interlayers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 6: AVS, pp. 1883–1891, 2003.
2004
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
2005
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
2006
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
2007
Koblmüller, G., F. Wu, T. Mates, JS. Speck, S. Fernández-Garrido, and E. Calleja, "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 91, no. 22: AIP, pp. 221905, 2007.
2017
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.