Publications

Found 174 results
Author Title Type [ Year(Asc)]
Filters: Author is others  [Clear All Filters]
2007
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
2006
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Barabash, RI., G. E. Ice, W. Liu, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1508–1513, 2006.
Keller, S., C. Schaake, NA. Fichtenbaum, CJ. Neufeld, Y. Wu, K. McGroddy, A. David, SP. DenBaars, C. Weisbuch, JS. Speck, et al., "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
Koyama, T., T. Onuma, H. Masui, A. Chakraborty, BA. Haskell, S. Keller, UK. Mishra, JS. Speck, S. Nakamura, SP. DenBaars, et al., "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
2005
López-Richard, V., AM. Alcalde, SJ. Prado, GE. Marques, B. T. Langdon, Y. Paltiel, N. Snapi, A. Zussman, C. Mar Blanca, V. Julius Cemine, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
2004
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Lombardet, B., R. Ferrini, LA. Dunbar, R. Houdré, C. Cuisin, O. Drisse, F. Lelarge, F. Pommereau, F. Poingt, GH. Duan, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 85, no. 22, pp. 5391, 2004.
Tenne, DA., XX. Xi, YL. Li, LQ. Chen, A. Soukiassian, DG. Schlom, TR. Taylor, PJ. Hansen, JS. Speck, RA. York, et al., "Raman studies of lattice dynamics and phase transitions in barium strontium titanate thin films", APS Meeting Abstracts, 2004.
2003
Katona, TM., MC. Schmidt, T. Margalith, C. Moe, H. Tamura, H. Sato, C. Funaoka, R. Underwood, S. Nakamura, JS. Speck, et al., "336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction", physica status solidi (c), no. 7: Wiley Online Library, pp. 2206–2209, 2003.
Ambacher, O., M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, et al., "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures", physica status solidi (c), no. 6: WILEY-VCH Verlag, pp. 1878–1907, 2003.
DenBaars, SP., T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, et al., "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
2002
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
HUANG, S-Y., R-H. HORNG, W-K. WANG, T-E. YU, P-R. LIN, D-S. WUU, A. Murai, C. Kruse, K. Samonji, L. McCarthy, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
Okuno, K., Y. Saito, S. Boyama, N. Nakada, S. Nitta, R. George Tohmon, Y. Ushida, N. Shibata, N. A. Fichtenbaum, C. J. Neufeld, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2007, 574-575, 2007-09-19", J. Appl. Phys, vol. 92, pp. 5714, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
2001
Link, A., O. Ambacher, IP. Smorchkova, U. K. Mishra, J. S. Speck, M. Stutzmann, and others, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.

Pages