Publications
] , "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
, "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
, "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
, "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
, "MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors", Extended abstracts of the... Conference on Solid State Devices and Materials, vol. 1999, pp. 206–207, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
, "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
, "iJMR Abstracts", MRS BULLETIN, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
, "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
, "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
, "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
, "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.