Publications

Found 174 results
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2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, C. Shen, T. Margalith, T. Khee Ng, SP. DenBaars, B. S. Ooi, JS. Speck, et al., "Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481B, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Eisele, H., J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, et al., "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
Fortunato, E., B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2016.
Jiang, R., E. Xia Zhang, X. Shen, J. Chen, K. Ni, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
2017
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Forman, C. A., S. Lee, E. C. Young, J. T. Leonard, D. A. Cohen, B. P. Yonkee, T. Margalith, R. M. Farrell, S. P. DenBaars, J. S. Speck, et al., "Nonpolar GaN-based vertical-cavity surface-emitting lasers", Photonics Conference (IPC), 2017 IEEE: IEEE, pp. 233–234, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
Böer, K. Wolfgang, M. S. Brandt, M. J. Caldas, Z. Cao, P. Deák, D. A. Drabold, A. L. Efros, C. Felser, E. Fortunato, B. Gil, et al., Stefan Hildebrandt, 2017.
Shen, C., T. Khee Ng, Y. Guo, C. Lee, J. T. Leonard, G. Liu, K. Ting Ho, H. M. Oubei, X. Sun, J. H. Lerma, et al., Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication, 2017.
Jiang, R., E. Xia Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 64, no. 1: IEEE, pp. 218–225, 2017.
2018
Filoche, M., M. Piccardo, C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, S. Mayboroda, J-M. Lentali, L. Martinelli, et al., "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320S, 2018.
Saifaddin, B., C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al., "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
Hahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, et al., "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Borgatti, F., JA. Berger, D. Céolin, J. Sky Zhou, J. J. Kas, M. Guzzo, CF. McConville, F. Offi, G. Panaccione, A. Regoutz, et al., "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.

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