Publications
Found 13 results
Author Title Type [ Year
Filters: Author is Nakamura, Shuji and First Letter Of Title is L [Clear All Filters]
"Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer", Crystals, vol. 12, pp. 721, 2022.
, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
, "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
, Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
, , "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
, "Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy", Applied physics letters, vol. 90, no. 12: AIP, pp. 122116, 2007.
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