Publications

Found 331 results
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2014
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition, 2014.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD), 2014.
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Koslow, I. L., C. McTaggart, F. Wu, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
Chakraborty, A., K-C. Kim, J. S. Speck, S. P. DenBaars, and U. K. Mishra, In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In) N, 2014.
Speck, J. S., A. Tyagi, S. P. DenBaars, and S. Nakamura, Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning, 2014.
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga, Al, In, B) N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga, Al, In, B) N SUBSTRATES, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, jul # " 3", 2014.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, F. Wu, A. E. Romanov, E. C. Young, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Onset of plastic relaxation in semipolar (112\= 2) InxGa1- xN/GaN heterostructures", Journal of Crystal Growth, vol. 388: North-Holland, pp. 48–53, 2014.
Marcinkevičius, S., K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical properties and carrier dynamics in m-plane InGaN quantum wells", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 690–693, 2014.
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
Keller, S., H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars, et al., "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
Wu, F., Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al, Ga, In) N, 2014.
Perl, E. E., W. E. McMahon, R. M. Farrell, S. P. DenBaars, J. S. Speck, and J. E. Bowers, "Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties", Nano letters, vol. 14, no. 10: ACS Publications, pp. 5960–5964, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
2013
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
Nakamura, S., J. S. Speck, S. P. DenBaars, and A. Tyagi, Cleaved facet (Ga, Al, In) N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Holder, C., D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Vertical-Cavity Surface-Emitting Lasers XVII, vol. 8639: International Society for Optics and Photonics, pp. 863906, 2013.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.

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