Publications
Found 331 results
Author Title Type [ Year
] Filters: Author is DenBaars, Steven P [Clear All Filters]
, "Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091102, 2008.
, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
, High efficiency white, single or multi-color light emitting diodes (leds) by index matching structures, may # " 29", 2008.
, "High power and high efficiency semipolar InGaN light emitting diodes", Journal of Light & Visual Environment, vol. 32, no. 2: The Illuminating Engineering Institute of Japan, pp. 107–110, 2008.
, "Impact of point defects on the luminescence properties of (Al, Ga) N", Materials Science Forum, vol. 590: Trans Tech Publications, pp. 233–248, 2008.
, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
, "M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 2963–2965, 2008.
, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
, "Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting", Journal of the Society for Information Display, vol. 16, no. 4: Wiley Online Library, pp. 571–578, 2008.
, "Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope", physica status solidi (a), vol. 205, no. 5: Wiley Online Library, pp. 1203–1206, 2008.
, "Optical properties of yellow light-emitting diodes grown on semipolar (11 2 2) bulk GaN substrates", Applied Physics Letters, vol. 92, no. 22: AIP, pp. 221110, 2008.
, "Plane Dependent Growth of GaN in Supercritical Basic Ammonia", Applied physics express, vol. 1, no. 12: IOP Publishing, pp. 121103, 2008.
, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
, "Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091103, 2008.
, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
, "Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMAA1, 2008.
, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.