Publications

Found 673 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S  [Clear All Filters]
2004
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Speck, J. S., Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy: DTIC Document, 2004.
2003
Sato, H., P. Waltereit, D. S. Green, C. Poblenz, T. Katona, S. P. DenBaars, J. S. Speck, H. Tamura, and C. Funaoka, "Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy", physica status solidi (c), no. 7: Wiley Online Library, pp. 2193–2197, 2003.
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
Serraiocco, J. L., P. J. Hansen, T. R. Taylor, J. S. Speck, and R. A. York, "Compact ferroelectric reflection phase shifters at X-band", Microwave Symposium Digest, 2003 IEEE MTT-S International, vol. 3: IEEE, pp. 1993–1996, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 83, no. 1: AIP, pp. 90–92, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Heikman, S., S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.
Petroff, P. M., J. S. Speck, J. Anna Johnson, and H. Lee, Strain-engineered, self-assembled, semiconductor quantum dot lattices, 2003.
Yu, E. T., Y. Arakawa, A. Rizzi, and J. S. Speck, Symposium L: GaN and Related Alloys: DTIC Document, 2003.
2002
Simpkins, B. S., Y. T Edward, P. Waltereit, and J. S. Speck, "Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
Davis, R. F., A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, EVAN. R. Glaser, and WILLIAM. E. Carlos, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
Liu, Y., T. R. Taylor, J. S. Speck, and R. A. York, "High-isolation BST-MEMS switches", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 1: IEEE, pp. 227–230, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180/spl deg/high performance phase shifter using (Ba, Sr) TiO/sub 3/thin films", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 3: IEEE, pp. 1467–1469, 2002.
Ullrich, A., W. Pompe, J. S. Speck, and AE. Romanov, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
2001
Liu, Y., B. Acikeia, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Distributed phase shifters using (Ba, Sr) TiO3 thin films on sapphire and glass substrates", Integrated Ferroelectrics, vol. 39, no. 1-4: Taylor & Francis, pp. 313–320, 2001.
Link, A., O. Ambacher, IP. Smorchkova, U. K. Mishra, J. S. Speck, M. Stutzmann, and others, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
McCarthy, L. S., I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, SP. DenBaars, et al., "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
Waltereit, P., and J. S. Speck, "Impact of In content on the structural and optical properties of (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", MRS Online Proceedings Library Archive, vol. 693: Cambridge University Press, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.

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