Publications

Found 496 results
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2007
Hirai, A., BA. Haskell, MB. McLaurin, F. Wu, MC. Schmidt, KC. Kim, TJ. Baker, SP. DenBaars, S. Nakamura, and JS. Speck, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
Zhong, H., A. Tyagi, NN. Fellows, RB. Chung, M. Saito, K. Fujito, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
Hirai, A., Z. Jia, MC. Schmidt, RM. Farrell, SP. DenBaars, S. Nakamura, JS. Speck, and K. Fujito, "Formation and reduction of pyramidal hillocks on m-plane ${$1 1 00$}$ GaN", Applied Physics Letters, vol. 91, no. 19: AIP, pp. 191906, 2007.
Keller, S., NA. Fichtenbaum, M. Furukawa, JS. Speck, SP. DenBaars, and UK. Mishra, "Growth and characterization of N-polar In Ga N/ Ga N multiquantum wells", Applied physics letters, vol. 90, no. 19: AIP, pp. 191908, 2007.
Gallinat, CS., G. Koblmüller, JS. Brown, and JS. Speck, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN", Journal of Applied Physics, vol. 102, no. 6: AIP, pp. 064907, 2007.
Koblmüller, G., F. Wu, T. Mates, JS. Speck, S. Fernández-Garrido, and E. Calleja, "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 91, no. 22: AIP, pp. 221905, 2007.
Schmidt, MC., KC. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, SP. DenBaars, and JS. Speck, "High Power and High External Efficiency m-Plane InGaN LEDs", The European Conference on Lasers and Electro-Optics: Optical Society of America, pp. CE3_3, 2007.
Chichibu, SF., T. Onuma, T. Hashimoto, K. Fujito, F. Wu, JS. Speck, and S. Nakamura, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
Koblmüller, G., S. Fernández-Garrido, E. Calleja, and JS. Speck, "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 91, no. 16: AIP, pp. 161904, 2007.
Keller, S., NA. Fichtenbaum, F. Wu, D. Brown, A. Rosales, SP. DenBaars, JS. Speck, and UK. Mishra, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
Fichtenbaum, NA., CJ. Neufeld, C. Schaake, Y. Wu, MH. Wong, M. Grundmann, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1802–1805, 2007.
Keller, S., NA. Fichtenbaum, C. Schaake, CJ. Neufeld, A. David, E. Matioli, Y. Wu, SP. DenBaars, JS. Speck, C. Weisbuch, et al., "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
Haskell, BA., S. Nakamura, SP. DenBaars, and JS. Speck, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth, 2007.
Koblmüller, G., CS. Gallinat, and JS. Speck, "Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 101, no. 8: AIP, pp. 083516, 2007.
Wu, Y., CG. Moe, S. Keller, SP. DenBaars, and JS. Speck, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
2006
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Zhou, X., ET. Yu, DS. Green, and JS. Speck, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
Arehart, AR., B. Moran, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.

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