Publications

Found 43 results
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2016
Yonkee, BP., EC. Young, SP. DenBaars, S. Nakamura, and JS. Speck, "Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction", Applied Physics Letters, vol. 109, no. 19: AIP Publishing, pp. 191104, 2016.
2015
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Kelchner, KM., LY. Kuritzky, S. Nakamura, SP. DenBaars, and JS. Speck, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
2014
von Wenckstern, H., D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, JS. Speck, and others, "Schottky contacts to In ${$sub 2$}$ O ${$sub 3$}$", APL Materials, vol. 2, no. 4, 2014.
2013
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Pimputkar, S., S. Kawabata, JS. Speck, and S. Nakamura, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
2011
Dasgupta, S., DF. Brown, JS. Speck, UK. Mishra, and others, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
2010
Linhart, WM., TD. Veal, PDC. King, G. Koblmüller, CS. Gallinat, JS. Speck, and CF. McConville, "Surface, bulk, and interface electronic properties of nonpolar InN", Applied Physics Letters, vol. 97, no. 11: AIP, pp. 112103, 2010.
2008
Ive, T., T. Ben-Yaacov, CG. Van de Walle, UK. Mishra, SP. DenBaars, and JS. Speck, "Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy", Journal of Crystal Growth, vol. 310, no. 15: North-Holland, pp. 3407–3412, 2008.
Corrion, AL., C. Poblenz, F. Wu, and JS. Speck, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
Choi, Y., M. Iza, E. Matioli, G. Koblmüller, JS. Speck, C. Weisbuch, and EL. Hu, "Submicron-thick microcavity InGaN light emitting diodes [6910-27]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6910: International Society for Optical Engineering; 1999, pp. 6910, 2008.
2007
Koblmüller, G., CS. Gallinat, and JS. Speck, "Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 101, no. 8: AIP, pp. 083516, 2007.
2006
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
Romanov, AE., TJ. Baker, S. Nakamura, JS. Speck, and ERATO/JST. U. C. S. B. Group, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
2004
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Andrews, AM., R. LeSar, MA. Kemer, JS. Speck, AE. Romanov, AL. Koiesnikova, M. Bobeth, and W. Pompe, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.
2003
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
Cantu, P., S. Keller, F. Wu, P. Waltereit, AE. Romanov, UK. Mishra, JS. Speck, and SP. DenBaars, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
Romanov, AE., and JS. Speck, "Stress relaxation in mismatched layers due to threading dislocation inclination", Applied Physics Letters, vol. 83, no. 13: AIP, pp. 2569–2571, 2003.
Craven, MD., A. Chakraborty, B. Imer, F. Wu, S. Keller, UK. Mishra, JS. Speck, and SP. DenBaars, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
Haskell, BA., F. Wu, S. Matsuda, MD. Craven, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.
Elhamri, S., A. Saxler, WC. Mitchel, R. Berney, C. Elsass, Y. Smorchkova, UK. Mishra, JS. Speck, U. Chowdhury, and RD. Dupuis, "Study of deleterious aging effects in GaN/AlGaN heterostructures", Journal of applied physics, vol. 93, no. 2: AIP, pp. 1079–1082, 2003.
2002
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.
2001
Lee, H., JA. Johnson, MY. He, JS. Speck, and PM. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.

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