Publications
Found 9 results
Author Title Type [ Year
Filters: Author is Srinivas Gandrothula [Clear All Filters]
"Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
, "Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser", Applied Physics Express, vol. 14, pp. 031002, feb, 2021.
, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
, "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
, "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
, "Optical Analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation", Japanese Journal of Applied Physics, vol. 63, issue 4, 04/2024.
, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
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