Publications

Found 7 results
Author Title Type [ Year(Asc)]
Filters: Author is Yuewei Zhang  [Clear All Filters]
2021
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Mauze, A., T. Itoh, Y. Zhang, and J. S. Speck, "Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
2020
Zhang, Y., and J. S. Speck, "Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices", Semiconductor Science and Technology, vol. 35, pp. 125018, oct, 2020.
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
2019
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, "Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped $\upbeta$-Ga2O3", Applied Physics Express, vol. 12, pp. 044005, mar, 2019.