Publications
] , "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
, "Direct measurement of nanoscale lateral carrier diffusion: toward scanning diffusion microscopy", ACS Photonics: American Chemical Society, 2017.
, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
, "Spatial variations of optical properties of semipolar InGaN quantum wells", Gallium Nitride Materials and Devices X, vol. 9363: International Society for Optics and Photonics, pp. 93631U, 2015.
, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.