Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Author is Chu, R  [Clear All Filters]
2011
Roy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, et al., "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
2008
Keller, S., CS. Suh, NA. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, SP. DenBaars, JS. Speck, et al., "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
Keller, S., CS. Suh, Z. Chen, R. Chu, S. Rajan, NA. Fichtenbaum, M. Furukawa, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 103, no. 3: AIP, pp. 033708, 2008.
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
2007
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Chu, R., CS. Suh, MH. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, JS. Speck, and UK. Mishra, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.