Publications

Found 11 results
Author Title Type [ Year(Asc)]
Filters: Author is Andrews, AM  [Clear All Filters]
2004
Andrews, AM., R. LeSar, MA. Kerner, JS. Speck, AE. Romanov, AL. Kolesnikova, M. Bobeth, and W. Pompe, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
Andrews, AM., R. LeSar, MA. Kemer, JS. Speck, AE. Romanov, AL. Koiesnikova, M. Bobeth, and W. Pompe, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.
2003
Andrews, AM., KL. van Horn, T. Mates, and JS. Speck, "Antimony segregation in the oxidation of AlAsSb interlayers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 6: AVS, pp. 1883–1891, 2003.
2002
Andrews, AM., and JS. Speck, "Antimony segregation in the oxidation of strained AlAsSb interlayers", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 181–182, 2002.
Andrews, AM., and JS. Speck, "Crosshatch surface morphology in mismatched films", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 23–24, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
2001
Mathis, SK., KHA. Lau, AM. Andrews, EM. Hall, G. Almuneau, EL. Hu, and JS. Speck, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
2000
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: AIP, pp. 845–847, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Strain relaxation of InGaAs by lateral oxidation of AlAs", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2066–2071, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: New York [etc.] American Institute of Physics., pp. 845–847, 2000.