Publications
"Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
, "Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 48–53, 2014.
, "Schottky contacts to In2O3", APL Materials, vol. 2, no. 4: AIP, pp. 046104, 2014.
, "Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films", Applied Physics Letters, vol. 107, no. 25: AIP Publishing, pp. 252105, 2015.
, "Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes", Thin Solid Films, vol. 605: Elsevier, pp. 186–192, 2016.
, "Erratum: Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93, 045203 (2016)]", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 239905, 2016.
, "Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces", Journal of Physics: Condensed Matter, vol. 28, no. 22: IOP Publishing, pp. 224006, 2016.
, "Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift", Physical Review B, vol. 93, no. 4: APS, pp. 045203, 2016.
, "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
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