Publications

Found 261 results
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2013
Metcalfe, G. D., A. Hirai, E. C. Young, J. S. Speck, H. Shen, and M. Wraback, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.
2014
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Zhao, Y., F. Wu, T. Jui Yang, Y. Renn Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
Piccardo, M., L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch, and J. Peretti, "Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy", Physical Review B, vol. 89, no. 23: APS, pp. 235124, 2014.
Giddings, AD., TJ. Prosa, A. Merkulov, FA. Stevie, HG. Francois-Saint-Cyr, NG. Young, JS. Speck, and DJ. Larson, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
Yang, T-J., J. S. Speck, and Y-R. Wu, "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861I, 2014.
Yang, T-J., R. Shivaraman, J. S. Speck, and Y-R. Wu, "The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior", Journal of Applied Physics, vol. 116, no. 11: AIP Publishing, pp. 113104, 2014.
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Holder, CO., JT. Leonard, RM. Farrell, DA. Cohen, B. Yonkee, JS. Speck, SP. DenBaars, S. Nakamura, and DF. Feezell, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, F. Wu, A. E. Romanov, E. C. Young, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Onset of plastic relaxation in semipolar (112\= 2) InxGa1- xN/GaN heterostructures", Journal of Crystal Growth, vol. 388: North-Holland, pp. 48–53, 2014.
Iveland, J., M. Piccardo, L. Martinelli, J. Peretti, J. Won Choi, N. Young, S. Nakamura, J. S. Speck, and C. Weisbuch, "Origin of electrons emitted into vacuum from InGaN light emitting diodes", Applied Physics Letters, vol. 105, no. 5: AIP Publishing, pp. 052103, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
2015
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Kyle, E. C. H., S. W. Kaun, E. C. Young, and J. S. Speck, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Koblmüller, G., , EC. Young, and JS. Speck, "Molecular beam epitaxy of nitrides for advanced electronic materials", Handbook of Crystal Growth: Thin Films and Epitaxy (Second Edition), pp. 705–754, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.

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