Publications
Found 632 results
Author Title Type [ Year
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, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
, "Optical properties of GaN/AlN (0001) quantum dots grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 7L: IOP Publishing, pp. L669, 2006.
, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy", IEICE transactions on electronics, vol. 89, no. 7: The Institute of Electronics, Information and Communication Engineers, pp. 906–912, 2006.
, "Special Section on Heterostructure Microelectronics with TWHM2005-GaN-Based Devices-Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by", IEICE Transactions on Electronics, vol. 89, no. 7: Tokyo, Japan: Institute of Electronics, Information and Communication Engineers, c1992-, pp. 906–912, 2006.
, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
, "Buried stressors in nitride semiconductors: Influence on electronic properties", Journal of applied physics, vol. 97, no. 4: AIP, pp. 043708, 2005.