Publications

Found 632 results
Author Title Type [ Year(Desc)]
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1983
Kanber, H., RJ. Cipolli, and JM. Whelan, About Materials Science, 1983.
1991
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
1992
Williams, KE., JS. Speck, and MD. Drory, "Characterization of the Si/Diamond Interface", MRS Online Proceedings Library Archive, vol. 242: Cambridge University Press, 1992.
Williams, KE., EJ. Tarsa, and JS. Speck, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.
1993
Speck, JS., M. De Graef, AP. Wilkinson, AK. Cheetham, and DR. Clarke, "Hierarchical domain structures and in situ domain migration in the antiferroelectric ceramic PLSnZT", Journal of applied physics, vol. 73, no. 11: AIP, pp. 7261–7267, 1993.
1994
Wilkinson, A. P., J. S. Speck, A. K. Cheetham, S. Natarajan, and J. Meurig Thomas, "{In situ x-ray diffraction study of crystallization kinetics in PbZr1-xTixO3,(PZT", Chemistry of Materials, vol. 6, no. 6: American Chemical Society, pp. 750–754, 1994.
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
Kapolnek, D., XH. Wu, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
1996
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Allemann, JA., Y. Xia, RE. Morriss, AP. Wilkinson, H. Eckert, JS. Speck, CG. Levi, FF. Lange, and S. Anderson, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Chen, C-H., E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
Wu, XH., D. Kapolnek, and JS. Speck, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
Heying, B., XH. Wu, S. Keller, Y. Li, D. Kapolnek, BP. Keller, S. P. DenBaars, and JS. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.

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