Publications

Found 2098 results
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2009
Dasgupta, S., Y. Pei, B. L. Swenson, D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2009.
Akopian, N., A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, CR. Elsass, IP. Smorchkova, and JS. Speck, "Fermi edge singularity observed in GaN/AlGaN heterointerfaces", Applied Physics Letters, vol. 94, no. 22: AIP, pp. 223502, 2009.
Akopian, N., A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, CR. Elsass, IP. Smorchkova, and JS. Speck, "Fermi edge singularity observed in GaN/AlGaN heterointerfaces", Applied Physics Letters, vol. 94, no. 22: AIP, pp. 223502, 2009.
Matioli, E., M. Iza, Y-S. Choi, F. Wu, S. Keller, H. Masui, E. Hu, J. Speck, and C. Weisbuch, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Scarpulla, M. A., CS. Gallinat, S. Mack, JS. Speck, and AC. Gossard, "GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy", Journal of Crystal Growth, vol. 311, no. 5: North-Holland, pp. 1239–1244, 2009.
Scarpulla, M. A., CS. Gallinat, S. Mack, JS. Speck, and AC. Gossard, "GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy", Journal of Crystal Growth, vol. 311, no. 5: North-Holland, pp. 1239–1244, 2009.
Matioli, E., S. Keller, F. Wu, Y-S. Choi, E. Hu, J. Speck, and C. Weisbuch, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
Dasgupta, S., F. Wu, JS. Speck, and UK. Mishra, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN (0001) templates", physica status solidi (c), vol. 6, no. 6: Wiley Online Library, pp. 1464–1467, 2009.
D'evelyn, M. P., J. S. Speck, M. T. Coulter, and S. Nakamura, Heater device and method for high pressure processing of crystalline materials, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
Wong, M. Hoi, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
Navarro, A., C. Rivera, J. Pereiro, E. Munoz, B. Imer, SP. DenBaars, and JS. Speck, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
Ive, T., T. Ben-Yaacov, C. G. Van de Walle, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Homoepitaxial growth and characterization of ZnO (0001) thin films grown by metalorganic chemical vapor epitaxy", physica status solidi (c), vol. 6, no. 6: Wiley Online Library, pp. 1460–1463, 2009.
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
Tsai, MY., ME. White, and JS. Speck, "Investigation of (110) Sn O 2 growth mechanisms on Ti O 2 substrates by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024911, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
Sato, H., R. B. Chung, F. Wu, J. S. Speck, S. P. DenBaars, and S. Nakamura, MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES, 2009.
Sato, H., R. B. Chung, F. Wu, J. S. Speck, S. P. DenBaars, and S. Nakamura, MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES, 2009.
Hardy, M. T., K. M. Kelchner, Y-. Da Lin, P. Shan Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN", Applied physics letters, vol. 95, no. 8: American Institute of Physics, 2009.

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