Publications
Found 2098 results
Author Title Type [ Year
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, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
, "Erratum:ìAsymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructuresî[Appl. Phys. Lett. 101, 091601 (2012)]", Applied Physics Letters, vol. 101, no. 22: AIP, pp. 229902, 2012.
, "GaN Laser Diodes on Nonpolar and Semipolar Planes", Semiconductors and Semimetals, vol. 86: Elsevier, pp. 149–182, 2012.
, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
, "Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 112, no. 5: AIP, pp. 054903, 2012.
, "HAADF-STEM and TEM Investigation on the Structure of ${$-2110$}$ Prismatic Stacking Faults in a-plane GaN", Microscopy and Microanalysis, vol. 18, no. S2: Cambridge University Press, pp. 1342, 2012.
, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
, "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", Meeting Abstracts, no. 43: The Electrochemical Society, pp. 3202–3202, 2012.
, "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
, "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 15: AIP, pp. 152104, 2012.
, "Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs", CLEO: Applications and Technology: Optical Society of America, pp. JTh2A–72, 2012.