Publications

Found 2098 results
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2013
Pourhashemi, A., RM. Farrell, MT. Hardy, PS. Hsu, KM. Kelchner, JS. Speck, SP. DenBaars, and S. Nakamura, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
Bryant, B. N., A. Hirai, E. C. Young, S. Nakamura, and J. S. Speck, "Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy", Journal of Crystal Growth, vol. 369: Elsevier, pp. 14–20, 2013.
Kaun, SW., MH. Wong, J. Lu, UK. Mishra, and JS. Speck, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "The Seebeck coefficient of In 2 O 3-Inferences on causes of unintentional conductivity and electron effective mass", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2013.
Speck, J. S., E. L. Hu, C. C. A. Weisbuch, Y. Seok Choi, G. Koblmüller, M. Iza, and C. Hurni, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
Feezell, D. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar $(${$$\backslash$hbox ${$20$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$2$}$$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$1$}$$}$$}$) $ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting", Journal of Display Technology, vol. 9, no. 4: IEEE, pp. 190–198, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
Hardy, M. T., S. Nakamura, S. P. DenBaars, and J. Stephen Speck, SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In, Al, B, Ga) N, 2013.
Pimputkar, S., S. Kawabata, JS. Speck, and S. Nakamura, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamua, Technique for the growth of planar semi-polar gallium nitride, sep # " 3", 2013.
Connelly, B., N. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
Connelly, B., N. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
Metcalfe, G. D., A. Hirai, E. C. Young, J. S. Speck, H. Shen, and M. Wraback, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.
Metcalfe, G. D., A. Hirai, E. C. Young, J. S. Speck, H. Shen, and M. Wraback, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.
Pfaff, N. A., K. M. Kelchner, D. F. Feezell, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes", Applied Physics Express, vol. 6, no. 9: IOP Publishing, pp. 092104, 2013.
Hardy, M. T., F. Wu, P. Shan Hsu, D. A. Haeger, S. Nakamura, J. S. Speck, and S. P. DenBaars, "True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy", Journal of Applied Physics, vol. 114, no. 18: AIP, pp. 183101, 2013.
Pimputkar, S., P. M. Von Dollen, J. S. Speck, and S. Nakamura, Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method, apr # " 25", 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals, 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2012
Haeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.
Haeger, D., E. Young, R. Chung, F. Wu, S. Nakamura, S. DenBaars, J. S. Speck, A. Romanov, and D. A. Cohen, "384nm AlGaN Diode Lasers on Relaxed Semipolar Buffers", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–4, 2012.

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