Publications

Found 2098 results
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2010
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Bierwagen, O., and J. S. Speck, "Nucleation of islands and continuous high-quality In 2 O 3 (001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO 2 (001)", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113519, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Wong, M. Hoi, F. Wu, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN using an aluminum oxide interlayer", Journal of Applied Physics, vol. 108, no. 12: AIP, pp. 123710, 2010.
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Keller, S., Y. Dora, F. Wu, X. Chen, S. Chowdury, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition", Applied Physics Letters, vol. 97, no. 14: AIP, pp. 142109, 2010.
Yang, C. Kai, P. Roblin, F. De Groote, S. A. Ringel, S. Rajan, J. Pierre Teyssier, C. Poblenz, Y. Pei, J. Speck, and U. K. Mishra, "Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer", IEEE transactions on microwave theory and techniques, vol. 58, no. 5: IEEE, pp. 1077–1088, 2010.

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