Publications

Found 2098 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is S  [Clear All Filters]
2010
Koblmüller, G., F. Reurings, F. Tuomisto, and JS. Speck, "Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature", Applied Physics Letters, vol. 97, no. 19: AIP, pp. 191915, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Rangel, E., E. Matioli, H-T. Chen, Y-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes", Applied Physics Letters, vol. 97, no. 6: AIP, pp. 061118, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, aug # " 10", 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, aug # " 10", 2010.
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Law, JJM., ET. Yu, G. Koblmüller, F. Wu, and JS. Speck, "Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 10: AIP, pp. 102111, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Farrell, RM., PS. Hsu, DA. Haeger, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.

Pages